Samsung MZ-V9S4T0B/AM 4TB NVMe PCIe 4.0/5.0 x2 M.2 Internal SSD

Part No:MZ-V9S4T0B/AM Write a Review

Condition:New

Brand:Samsung

Weight:1.02 lbs

Product Type:Internal Solid State Drive (SSD)

Samsung MZ-V9S4T0B/AM 990 EVO Plus 4TB NVMe M.2 Internal SSD

Overview :

The Samsung 990 EVO Plus 4TB is a high-capacity M.2 NVMe storage solution engineered for power users, content creators, and data-heavy professional workstations. It addresses the increasing demand for massive local storage without sacrificing throughput, providing a significant density upgrade for modern systems using the PCIe 4.0 x4 or PCIe 5.0 x2 interface.

This drive achieves sequential read speeds up to 7,250 MB/s, utilizing Samsung’s advanced V-NAND technology to provide a 50% speed increase over its predecessor. With a 4TB capacity, it eliminates the need for secondary storage drives in high-end laptops and small form factor (SFF) builds, allowing for massive libraries of 4K/8K video assets, complex 3D models, or expansive software development environments.

Deployment is intended for high-performance client computing. Its power-efficient design offers up to 73% better performance-per-watt compared to previous models, making it ideal for thermal-constrained environments. The drive includes a heat spreader label for passive cooling. It is not designed for data center environments with constant, high-intensity write cycles (DWPD).

keyfeture :

  • 4TB massive capacity provides ample space for high-resolution media

  • 7,250 MB/s read speed ensures rapid access to large professional files

  • Hybrid PCIe 4.0/5.0 interface offers versatile compatibility across boards

  • 73% improved power efficiency reduces thermal load in mobile workstations

  • 2,400 TBW endurance rating supports long-term reliability for heavy users

BrandSamsung
SKUMZ-V9S4T0B/AM
ConditionNew
Dimensions3.15 × 0.87 × 0.09 in
Weight1.02 lbs
Capacity4TB
InterfacePCIe Gen 4.0 x4 / Gen 5.0 x2
Part NumberMZ-V9S4T0B/AM
Product TypeInternal Solid State Drive (SSD)
ProtocolNVMe 2.0
Form FactorM.2 (2280)
NAND TypeSamsung V-NAND
Sequential ReadUp to 7,250 MB/s
Sequential WriteUp to 6,300 MB/s
Random Read (4KB, QD32)Up to 1,050,000 IOPS
Random Write (4KB, QD32)Up to 1,400,000 IOPS
Endurance (TBW)2,400 TBW
Mean Time Between Failure1.5 Million Hours

Warranty

Products include the manufacturer warranty where applicable. Warranty coverage, term, and service options may vary by manufacturer and product condition.

Returns

We guarantee free replacements on all new/refurbished equipment in case of any defects.

  • Returns must be requested within 30 days of the original invoice date.
  • Merchandise must be unused and in original packaging; bulk-packed and refurbished items must have unbroken sealing tape.
  • A 25% restocking fee applies to non-defective merchandise returned by mistake.
  • Discontinued, close-out, and custom printed items are non-returnable unless defective.
  • Customer is responsible for return freight costs.

View full return policy

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